PART |
Description |
Maker |
SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道,低Qg,快速开WFET,超低开关损 N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
SI9802DY |
Dual N-Channel Reduced Qg/ Fast Switching MOSFET Dual N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
KI4300DY |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
SI7388DP |
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和,快速开关MOSFET
|
Vishay Intertechnology, Inc.
|
SI4394DY-T1-E3 SI4394DY SI4394DY-E3 |
N-Channel Reduced Qdg, Fast Switching WFET From old datasheet system
|
VISAY[Vishay Siliconix]
|
SI4800BDY SI4800BDY-T1-E3 |
N-Channel Reduced Qg, Fast Switching MOSFET N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
DTP4N60 DTU4N60 |
Reduced Gate Drive Requirement
|
DinTek Semiconductor Co,.Ltd
|
MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|